| PART |
Description |
Maker |
| 2SC5233 E007768 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
From old datasheet system
|
Toshiba Semiconductor
|
| HN1C03FUTE85R |
For Muting And Switching Applications
|
Toshiba Semiconductor
|
| 3SK248 |
Muting/Switching Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| 2SC287807 2SC2878 |
Silicon NPN Epitaxial Type For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SC3326 E000830 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3327 E000831 |
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SA1955 |
TRANSISTOR (GENERAL PURPOSE AMPLIFIER/ SWITCHING AND MUTING SWITCH APPLICATIONS)
TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC421307 2SC4213 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| HN1C03FU E001973 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2704K12 |
For Muting
|
Rohm
|
